Hfe transistor 2n1711 pdf

For your security, you are about to be logged out 60 seconds. For example, the data sheet of the 2n3904 shows a hfe of 100 minimum at 10ma collector current and 1 volt collector voltage. Apr 29, 2019 it means that the multimeter is marketed to home experimenters and the like, that might be using surplus or scrapped materials for projects, and so would like to find the better gain in such surplused transistors. Hefei luogang international airport, in anhui, china, now defunct. The 2n1711 is a npn silicon transistor for amplifier and switching applications. Bipolar bjt single transistor, npn, 50 v, 70 mhz, 3 w, 500 ma, 35 hfe. This device features high breakdown voltage, low leakage current, low capacity and. The 2n1711 is a silicon planar epitaxial npn transistor in jedec to39 metal case. Jan 26, 2008 hfe is a transistor parameter that denotes its gain ratio. Polarity nchannel, pchannel, npn and pnp, for example composition material germanium, silicon, etc. The closest i could come to the rb value was 7170 ohms. In technical terms, hfe for a transistor is the gain ratio of the collector current output divided by the base current input.

Due to the high gain characteristic the transistor will switch on with just ib100a. Quick reference data symbol parameter conditions min typ max unit per transistor. Npn epitaxial planar transistor designed for small signal general purpose switching applications. Hparameter model h fe, the current gain of a bipolar junction transistor. Transistor tester to test hfe and working of npn and pnp. Hfe gene, a gene that encodes the human hemochromatosis protein. Bc327328 pnp epitaxial silicon transistor absolute maximum ratings ta25c unless otherwise noted electrical characteristics ta25c unless otherwise noted hfe classification symbol parameter value units vces collectoremitter voltage. The small letter h indicates it is a small signal gain. Bc847bpn 45 v, 100 ma npnpnp generalpurpose transistor. A, february 2000 bd579 1 to126 npn epitaxial silicon transistor absolute maximum ratings tc25c unless otherwise noted electrical characteristics tc25c unless otherwise noted hfe classification symbol parameter value units. So if 1ma is fed into the base of a transistor and it has a hfe of 100, the collector current will be 100ma.

The base current is then amplified by hfe to yield its amplified current. So your transistor will actually say something like, 2sc828aq, 2sc828ar or 2sc828as, being 3 variants of 2sc828a. Bc107 datasheet, bc107 pdf, bc107 data sheet, bc107 manual, bc107 pdf, bc107, datenblatt, electronics bc107, alldatasheet, free, datasheet, datasheets, data sheet. Buy 2n1711 stmotorola, learn more about 2n1711 trans gp bjt npn 30v 0. Table of contents page index to devices 3 power transistor product classification chart file type page vdrom max. Philips, alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. The suffix your transistor has determines which hfe gain it will have, as concluded from the datasheet. The most obvious problem is that hfe changes with temperature as the dut warms up hfe will increase. So if you see a bipolar transistor hfe, gain, or i. In reality, it is a fraction of an ohm, so low it is negligible. Npn bjt transistor hfe saturation switch all about circuits. A transistor works by feeding a current into the base of the transistor. These parameters are based on the hybrid model for studying the operation of a transistor amplifier in the low voltage region,also called small signal operation.

What is the significance of hfe, hie, hre and hoe in. This is the current gain for a transistor expressed as an h parameter hybrid parameter. The pot r5 can be adjusted to get a constant current of 10ua. The 2n1711 is also used to advantage in amplifiers where low noise is an important factor. Apr 18, 2015 i think mainly because getting a quality usable, if you depend on it measurement of some property of a transistor is a bit more involved. They measure the current flow by biasing the transistor. Transistor npn 75v 500ma to39 online from elcodis, view and download 2n1711 pdf datasheet, transistors bjt single specifications.

The 2n1711 is also used to advantage in amplifiers. Description collectoremitter voltage collectorbase voltage emitterbase voltage collector current continuous power dissipation 25c derate above 25c power dissipation 25c derate above 25c operating and storage junction temperature range thermal resistance junction to case rth jc 175 cw symbol vceo vcbo vebo a v unit. Npn epitaxial silicon transistor absolute maximum ratings tc25c unless otherwise noted electrical characteristics tc25c unless otherwise noted hfe classification symbol parameter value units vcbo collectorbase voltage. It is intented for use in high performance amplifier, oscillator and switching circuits. Discrete semiconductors data sheet book, halfpage m3d111 2n16 npn medium power transistor 1997 apr 11 product specification supersedes data of september 1994 file under discrete semiconductors, sc04 philips semiconductors product specification npn medium power transistor 2n16 features pinning low. The value of this constant current can be given by the equation. Hefei xinqiao international airport, in anhui, china. This device features high breakdown voltage, low leakage current, low capacity and beta useful over an extremely wide current range.

Free packages are available maximum ratings rating symbol value unit collector. The hie of a transistor is never anywhere near the 3k, 1k or 1. Npn medium power transistor, 2n1711 datasheet, 2n1711 circuit, 2n1711 data sheet. Philips npn medium power transistor,alldatasheet, datasheet, datasheet search site for electronic components and semiconductors, integrated circuits, diodes, triacs, and other semiconductors. Savantic semiconductor product specification bd silicon npn power transistors.